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STM32F031X4 датащи(PDF) 41 Page - STMicroelectronics |
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STM32F031X4 датащи(HTML) 41 Page - STMicroelectronics |
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41 / 106 page ![]() DocID025743 Rev 6 41/106 STM32F031x4 STM32F031x6 Electrical characteristics 80 6.3 Operating conditions 6.3.1 General operating conditions 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 19 are derived from tests performed under the ambient temperature condition summarized in Table 18. Table 18. General operating conditions Symbol Parameter Conditions Min Max Unit fHCLK Internal AHB clock frequency - 0 48 MHz fPCLK Internal APB clock frequency - 0 48 VDD Standard operating voltage - 2.0 3.6 V VDDA Analog operating voltage (ADC not used) Must have a potential equal to or higher than VDD VDD 3.6 V Analog operating voltage (ADC used) 2.4 3.6 VBAT Backup operating voltage - 1.65 3.6 V VIN I/O input voltage TC and RST I/O –0.3 VDDIOx+0.3 V TTa I/O –0.3 VDDA+0.3(1) FT and FTf I/O –0.3 5.5(1) BOOT0 0 5.5 PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(2) LQFP48 - 364 mW UFQFPN32 - 526 LQFP32 - 357 UFQFPN28 - 169 WLCSP25 - 267 TSSOP20 - 182 TA Ambient temperature for the suffix 6 version Maximum power dissipation –40 85 °C Low power dissipation(3) –40 105 Ambient temperature for the suffix 7 version Maximum power dissipation –40 105 °C Low power dissipation(3) –40 125 TJ Junction temperature range Suffix 6 version –40 105 °C Suffix 7 version –40 125 1. For operation with a voltage higher than VDDIOx + 0.3 V, the internal pull-up resistor must be disabled. 2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. See Section 7.7: Thermal characteristics. 3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.7: Thermal characteristics). |
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