6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature (unless otherwise noted)(1)

MIN

MAX

UNIT

VI

Input voltage(2)

–0.5

7

V

VI/O

Input/output voltage(2)

–0.5

7

V

Continuous channel current

128

mA

IIK

Input clamp current

VI < 0

–50

mA

TJ

Junction Temperature

150

°C

Tstg

Storage temperature range

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

The input and input or output negative-voltage ratings may be exceeded if the input and input or output clamp-current ratings are

observed.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 500-V HBM is possible with the necessary precautions.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with

less than 250-V CDM is possible with the necessary precautions.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

VI/O

Input/output voltage

0

5.5

V

Vref_A/B/EN

Reference voltage

0

5.5

V

IPASS

Pass transistor current

64

mA

TA

Operating free-air temperature

–40

125

°C

6.4 Thermal Information

THERMAL METRIC(1)

LSF0101

UNIT

DTQ (X2SON)

DRY (SON)

6 PINS

6 PINS

RθJA

Junction-to-ambient thermal resistance

294.4

407.0

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

188.9

285.2

°C/W

RθJB

Junction-to-board thermal resistance

216.8

271.6

°C/W

ψJT

Junction-to-top characterization parameter

26.5

113.5

°C/W

ψJB

Junction-to-board characterization parameter

216.0

271.0

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

n/a

°C/W

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

LSF0101

SDLS973 – JUNE 2023

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