PESDXV4UF_G_W_3

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 03 — 28 January 2008

7 of 16

NXP Semiconductors

PESDxV4UF/G/W

Very low capacitance quadruple ESD protection diode arrays

(1) PESD3V3V4UF; PESD3V3V4UG; PESD3V3V4UW

(2) PESD5V0V4UF; PESD5V0V4UG; PESD5V0V4UW

Fig 5.

Diode capacitance as a function of reverse

voltage; typical values

Fig 6.

Relative variation of reverse leakage current as

a function of junction temperature; typical

values

Fig 7.

V-I characteristics for a unidirectional ESD protection diode

05

4

23

1

006aaa262

10

12

8

14

16

(pF)

6

(1)

(2)

006aaa263

−100

150

100

050

−50

1

10

006aaa407

V

I

P-N

−

+