INA159 datasheet(10/49 Pages) TI2

10 / 49 page

7.7 Typical Characteristics

at TA = 25°C, VS = ±18 V, VCM = VOUT = VS / 2, RL = 10 kΩ, REF pin connected to ground, and G = 1/2 (unless otherwise

noted)

Offset Voltage (PV)

10%

20%

30%

40%

50%

-40

-32

-24

-16

-8

N = 470

Mean = 0.82 μV

Std. Dev. = 2.91 μV

G = 1/2

VS = ±2.25 V

VCM = –3 V

Figure 7-1. Typical Distribution of Offset Voltage (RTO)

Offset Voltage (PV)

10%

20%

30%

40%

50%

-80

-60

-40

-20

N = 470

Mean = 1.64 μV

Std. Dev. = 5.82 μV

G = 2

VS = ±2.25 V

VCM = –3 V

Figure 7-2. Typical Distribution of Offset Voltage (RTO)

Offset Voltage (PV)

10%

15%

20%

-40

-32

-24

-16

-8

N = 470

Mean = –5.22 μV

Std. Dev. = 8.38 μV

G = 1/2

VS = ±18 V

Figure 7-3. Typical Distribution of Offset Voltage (RTO)

Offset Voltage (PV)

10%

15%

20%

-80

-60

-40

-20

N = 470

Mean = –10.43 μV Std. Dev. = 16.77 μV

G = 2

VS = ±18 V

Figure 7-4. Typical Distribution of Offset Voltage (RTO)

Offset Voltage Drift (PV/qC)

10%

15%

20%

25%

30%

-2

-1.6

-1.2

-0.8

-0.4

0.4

0.8

1.2

1.6

N = 30

Mean = –0.075 μV/°C

Std. Dev. = 0.502 μV/°C

G = 1/2

Figure 7-5. Typical Distribution of Offset Voltage Drift (RTO)

Offset Voltage Drift (PV/qC)

10%

15%

20%

25%

30%

35%

-4

-3.2

-2.4

-1.6

-0.8

0.8

1.6

2.4

3.2

N = 30

Mean = –0.325 μV/°C

Std. Dev. = 0.887 μV/°C

G = 2

Figure 7-6. Typical Distribution of Offset Voltage Drift (RTO)

INA592

SBOS914F – OCTOBER 2018 – REVISED APRIL 2021

www.ti.com

Submit Document Feedback

Product Folder Links: INA592

INA159 датащи(PDF) 10 Page - Texas Instruments

INA159 датащи(HTML) 10 Page - Texas Instruments

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49

датащи скачать

ссылки URL