| поискавой системы для электроныых деталей |
|
INA159 датащи(PDF) 4 Page - Texas Instruments |
|
|
|||||||||||||||||||||||||||||
INA159 датащи(HTML) 4 Page - Texas Instruments |
|
4 / 49 page ![]() 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT V± Single supply, (V+) to (V–) 36 V Dual supply, (V+) – (V–) ±18 IIN Input current 10 mA IS Output short circuit (to ground) Continuous TA Operating temperature –55 125 °C TJ Junction temperature –55 125 °C Tstg Storage temperature 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings only, which do not imply functional operation of the device at these or anyother conditions beyond those indicated under Section 7.3. Exposure to absolute-maximum-rated conditions for extended periods mayaffect device reliability. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±500 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT V± Supply voltage Single supply, VS = (V+) 4.5 36 V Dual supply, VS = (V+) – (V–) ±2.25 ±18 TA Specified temperature –40 125 °C 7.4 Thermal Information THERMAL METRIC(1) INA592 UNIT D DGK DRC 8 PINS 8 PINS 10 PINS RθJA Junction-to-ambient thermal resistance 115 158 47.4 °C/W RθJC(top) Junction-to-case (top) thermal resistance 52.4 48.6 49.6 °C/W RθJB Junction-to-board thermal resistance 59.2 78.7 21.0 °C/W ψJT Junction-to-top characterization parameter 9.5 3.9 0.8 °C/W ψJB Junction-to-board characterization parameter 58.3 77.3 20.9 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A 5.3 5.3 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. INA592 SBOS914F – OCTOBER 2018 – REVISED APRIL 2021 www.ti.com 4 Submit Document Feedback Copyright © 2021 Texas Instruments Incorporated Product Folder Links: INA592 |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |