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INA159 датащи(PDF) 4 Page - Texas Instruments

номер детали INA159
подробное описание детали  INA592 High-Precision, Wide-Bandwidth e-trim™ Difference Amplifier
PDF  49 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
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INA159 датащи(HTML) 4 Page - Texas Instruments

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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
Single supply, (V+) to (V–)
36
V
Dual supply, (V+) – (V–)
±18
IIN
Input current
10
mA
IS
Output short circuit (to ground)
Continuous
TA
Operating temperature
–55
125
°C
TJ
Junction temperature
–55
125
°C
Tstg
Storage temperature
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings
only, which do not imply functional operation of the device at these or anyother conditions beyond those indicated under Section 7.3.
Exposure to absolute-maximum-rated conditions for extended periods mayaffect device reliability.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±500
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Supply voltage
Single supply, VS = (V+)
4.5
36
V
Dual supply, VS = (V+) – (V–)
±2.25
±18
TA
Specified temperature
–40
125
°C
7.4 Thermal Information
THERMAL METRIC(1)
INA592
UNIT
D
DGK
DRC
8 PINS
8 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
115
158
47.4
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
52.4
48.6
49.6
°C/W
RθJB
Junction-to-board thermal resistance
59.2
78.7
21.0
°C/W
ψJT
Junction-to-top characterization parameter
9.5
3.9
0.8
°C/W
ψJB
Junction-to-board characterization parameter
58.3
77.3
20.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
5.3
5.3
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
INA592
SBOS914F – OCTOBER 2018 – REVISED APRIL 2021
www.ti.com
4
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Copyright © 2021 Texas Instruments Incorporated
Product Folder Links: INA592



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