5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Electrical Fast

Transient

IEC 61000-4-4 Peak Current at 25 °C

80

A

Surge Pulse

IEC 61000-4-5 Surge (tp 8/20µs) Peak Power at 25 °C

40

W

IEC 61000-4-5 Surge (tp 8/20µs) Peak Current at 25 °C

6

A

TA

Operating free-air temperature

–40

125

°C

Tstg

Storage temperature

–65

155

°C

(1)

Stresses beyond those listed under Section 5.1 may cause permanent damage to the device. These are stress ratings only, which do

not imply functional operation of the device at these or any other conditions beyond those indicated under Section 5.4. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability.

5.2 ESD Ratings – JEDEC Specifications

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/

JEDEC JS-001, all pins(1)

±2500

V

Charged device model (CDM), per JEDEC

specification JESD22-C101, all pins(2)

±1000

(1)

JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.

5.3 ESD Ratings – IEC Specifications

VALUE

UNIT

V(ESD)

Electrostatic discharge

IEC 61000-4-2 Contact Discharge, all pins

±30000

V

IEC 61000-4-2 Air Discharge, all pins

±30000

5.4 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input voltage

0

3.6

V

TA

Operating Free Air Temperature

–40

125

°C

5.5 Thermal Information

THERMAL METRIC (1)

ESD321

UNIT

DYA (SOD-523)

DPY (X1SON)

2 Pins

2 Pins

RθJA

Junction-to-ambient thermal resistance

774.7

437.8

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

462.3

249.5

°C/W

RθJB

Junction-to-board thermal resistance

541.1

169.2

°C/W

ΨJT

Junction-to-top characterization parameter

164.4

99.3

°C/W

ΨJB

Junction-to-board characterization parameter

534.6

168.6

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

ESD321

SLVSEN8C – JULY 2018 – REVISED JUNE 2025

www.ti.com

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