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AMC1306E05, AMC1306E25, AMC1306M05, AMC1306M25

www.ti.com

SBAS734C – MARCH 2017 – REVISED JANAURY 2020

Product Folder Links: AMC1306E05 AMC1306E25 AMC1306M05 AMC1306M25

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Copyright © 2017–2020, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7 Specifications

7.1 Absolute Maximum Ratings

(1)

MIN

MAX

UNIT

Supply voltage

AVDD to AGND or DVDD to DGND

–0.3

6.5

V

Analog input voltage at AINP, AINN

AGND – 6

AVDD + 0.5

V

Digital input or output voltage at CLKIN or DOUT

DGND – 0.5

DVDD + 0.5

V

Input current to any pin except supply pins

–10

10

mA

Junction temperature, TJ

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±1000

7.3 Recommended Operating Conditions

over operating ambient temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

AVDD

Analog (high-side) supply voltage (AVDD to AGND)

3.0

5.0

5.5

V

DVDD

Digital (controller-side) supply voltage (DVDD to DGND)

2.7

3.3

5.5

V

TA

Operating ambient temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

7.4 Thermal Information

THERMAL METRIC (1)

AMC1306x

UNIT

DWV (SOIC)

8 PINS

RθJA

Junction-to-ambient thermal resistance

112.2

°C/W

RθJC(top) Junction-to-case (top) thermal resistance

47.6

°C/W

RθJB

Junction-to-board thermal resistance

60.0

°C/W

ψJT

Junction-to-top characterization parameter

23.1

°C/W

ψJB

Junction-to-board characterization parameter

60.0

°C/W

RθJC(bot) Junction-to-case (bottom) thermal resistance

n/a

°C/W

7.5 Power Ratings

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

PD

Maximum power dissipation

(both sides)

AMC1306Ex, AVDD = DVDD = 5.5 V

91.85

mW

AMC1306Mx, AVDD = DVDD = 5.5 V

86.90

PD1

Maximum power dissipation

(high-side supply)

AVDD = 5.5 V

53.90

mW

PD2

Maximum power dissipation

(low-side supply)

AMC1306Ex, DVDD = 5.5 V

37.95

mW

AMC1306Mx, DVDD = 5.5 V

33.00