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TPD4S201 датащи(PDF) 6 Page - Texas Instruments

номер детали TPD4S201
подробное описание детали  TPD4S201 USB Type-C® 20V SPR Port Protector: Short-to-VBUS Overvoltage and IEC ESD Protection
PDF  28 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
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TPD4S201 датащи(HTML) 6 Page - Texas Instruments

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5.4 Recommended Operating Conditions (continued)
MIN
NOM
MAX
UNIT
External
Compone
nts(1)
External Components(1)
FLT Pull-up resistance
1.7
300
VBIAS capacitance (2)
0.04
0.1
0.14
µF
VPWR Capacitance
0.3
1
µF
VBUS_LV Capacitance
0.1
µF
(1)
For recommended values for capacitors and resistors, the typical values assume a component placed on the board near the pin.
Minimum and maximum values listed are inclusive of manufacturing tolerances, voltage derating, board capacitance, and temperature
variation. Enable the effective value presented to be within the minimum and maximums listed in the table.
(2)
The VBIAS pin requires a minimum 63-VDC rated capacitor. A 100-VDC rated capacitor is recommended to reduce capacitance
derating.
See the VBIAS Capacitor Selection section for more information on selecting the VBIAS capacitor.
5.5 Thermal Information
THERMAL METRIC(1)
UNIT
QFN
20 PINS
RθJA
Junction-to-ambient thermal resistance
44.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
41.8
°C/W
RθJB
Junction-to-board thermal resistance
17.7
°C/W
ψJT
Junction-to-top characterization parameter
0.7
°C/W
ψJB
Junction-to-board characterization parameter
17.7
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
7.9
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
5.6 Electrical Characteristics
over operating junction temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CC OVP Switches
RON
On Resistance of CC OVP FETs
CCx = 5.5V, TJ ≤ 85 ℃
272
420
CON_CC
Equivalent on Capacitance
Capacitance from CCx or C_CCx to
GND when device is powered. Measure
at VC_CCx/VCCx = 0V to 1.2V, f = 400kHz.
40
74
120
pF
RD_DB
Dead Battery Pull-Down Resistors (only
present when device is unpowered)
VC_CCx = 2.6V
4.1
5.1
6.1
VTH_DB
Threshold voltage of the pull-down FET
in series with RD during dead battery
IC_CCx = 80μA
0.5
0.9
1.2
V
VOVPCC
OVP Threshold on CC Pins
Place 5.5V on C_CCx. Step up C_CCx
until FLT pin is asserted. Put 100mA
load through the CC FET and see the
FET shuts off.
5.6
5.9
6.2
V
VOVPCC_HYS
Hysteresis on CC OVP
Place 6.5 V on C_CCx. Step down the
voltage on C_CCx until the FLT pin is
deasserted. Measure difference
between rising and falling OVP
threshold for C_CCx.
50
mV
BWON
On Bandwidth Single Ended (-3dB)
Measure the -3 dB bandwidth from
C_CCx to CCx. Single ended
measurement, 50-Ω system. Vcm =
0.1V to 1.2 V.
125
MHz
VSTBUS_CC
Short-to-VBUS tolerance on the CC pins
Hot-Plug C_CCx with a 1 meter USB
Type C Cable, place a 30-Ω load on
CCx
21.5
V
VSTBUS_CC_CLAMP
Short-to-VBUS System-Side Clamping
Voltage on the CC pins (CCx)
Hot-Plug C_CCx with a 1 meter USB
Type C Cable. Hot-Plug voltage
C_CCx = 51 V. VPWR = 3.3 V. Place
a 30-Ω load on CCx.
7
V
TPD4S201
SLVSIF2 – JULY 2025
www.ti.com
6
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Copyright © 2025 Texas Instruments Incorporated
Product Folder Links: TPD4S201



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