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TPD4S201 датащи(PDF) 6 Page - Texas Instruments |
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TPD4S201 датащи(HTML) 6 Page - Texas Instruments |
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6 / 28 page ![]() 5.4 Recommended Operating Conditions (continued) MIN NOM MAX UNIT External Compone nts(1) External Components(1) FLT Pull-up resistance 1.7 300 kΩ VBIAS capacitance (2) 0.04 0.1 0.14 µF VPWR Capacitance 0.3 1 µF VBUS_LV Capacitance 0.1 µF (1) For recommended values for capacitors and resistors, the typical values assume a component placed on the board near the pin. Minimum and maximum values listed are inclusive of manufacturing tolerances, voltage derating, board capacitance, and temperature variation. Enable the effective value presented to be within the minimum and maximums listed in the table. (2) The VBIAS pin requires a minimum 63-VDC rated capacitor. A 100-VDC rated capacitor is recommended to reduce capacitance derating. See the VBIAS Capacitor Selection section for more information on selecting the VBIAS capacitor. 5.5 Thermal Information THERMAL METRIC(1) UNIT QFN 20 PINS RθJA Junction-to-ambient thermal resistance 44.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 41.8 °C/W RθJB Junction-to-board thermal resistance 17.7 °C/W ψJT Junction-to-top characterization parameter 0.7 °C/W ψJB Junction-to-board characterization parameter 17.7 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 7.9 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 5.6 Electrical Characteristics over operating junction temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CC OVP Switches RON On Resistance of CC OVP FETs CCx = 5.5V, TJ ≤ 85 ℃ 272 420 mΩ CON_CC Equivalent on Capacitance Capacitance from CCx or C_CCx to GND when device is powered. Measure at VC_CCx/VCCx = 0V to 1.2V, f = 400kHz. 40 74 120 pF RD_DB Dead Battery Pull-Down Resistors (only present when device is unpowered) VC_CCx = 2.6V 4.1 5.1 6.1 kΩ VTH_DB Threshold voltage of the pull-down FET in series with RD during dead battery IC_CCx = 80μA 0.5 0.9 1.2 V VOVPCC OVP Threshold on CC Pins Place 5.5V on C_CCx. Step up C_CCx until FLT pin is asserted. Put 100mA load through the CC FET and see the FET shuts off. 5.6 5.9 6.2 V VOVPCC_HYS Hysteresis on CC OVP Place 6.5 V on C_CCx. Step down the voltage on C_CCx until the FLT pin is deasserted. Measure difference between rising and falling OVP threshold for C_CCx. 50 mV BWON On Bandwidth Single Ended (-3dB) Measure the -3 dB bandwidth from C_CCx to CCx. Single ended measurement, 50-Ω system. Vcm = 0.1V to 1.2 V. 125 MHz VSTBUS_CC Short-to-VBUS tolerance on the CC pins Hot-Plug C_CCx with a 1 meter USB Type C Cable, place a 30-Ω load on CCx 21.5 V VSTBUS_CC_CLAMP Short-to-VBUS System-Side Clamping Voltage on the CC pins (CCx) Hot-Plug C_CCx with a 1 meter USB Type C Cable. Hot-Plug voltage C_CCx = 51 V. VPWR = 3.3 V. Place a 30-Ω load on CCx. 7 V TPD4S201 SLVSIF2 – JULY 2025 www.ti.com 6 Submit Document Feedback Copyright © 2025 Texas Instruments Incorporated Product Folder Links: TPD4S201 |
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