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LPV7215

SNOSAI6J – SEPTEMBER 2005 – REVISED AUGUST 2016

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Copyright © 2005–2016, Texas Instruments Incorporated

(1)

The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is

PD = (TJ(MAX) – TA)/ θJA . All numbers apply for packages soldered directly onto a PCB.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

MAX

UNIT

Temperature(1)

–40

125

°C

Supply voltage (V+ – V−)

1.8

5.5

V

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

(2)

The maximum power dissipation is a function of TJ(MAX), θJA. The maximum allowable power dissipation at any ambient temperature is

PD = (TJ(MAX) – TA)/ θJA . All numbers apply for packages soldered directly onto a PCB.

6.4 Thermal Information

THERMAL METRIC(1)

LPV7215

UNIT

DBV (SOT-23)

DCK (SC70)

5 PINS

5 PINS

RθJA

Junction-to-ambient thermal resistance(2)

234

456

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

153

110.8

°C/W

RθJB

Junction-to-board thermal resistance

51.7

59.8

°C/W

ψJT

Junction-to-top characterization parameter

38

3.6

°C/W

ψJB

Junction-to-board characterization parameter

51.2

59

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

n/a

n/a

°C/W

(1)

Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device.

(2)

Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using

statistical quality control (SQC) method.

(3)

Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and also depend on the application and configuration. The typical values are not tested and are not specified on shipped

production material.

(4)

Offset voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change.

(5)

Positive current corresponds to current flowing into the device.

6.5 Electrical Characteristics: 1.8 V

Unless otherwise specified, all limits are specified for TA = 25°C, V

+ = 1.8V, V− = 0 V, and V

CM = V

+/2, V

O= V

−.(1)

PARAMETER

TEST CONDITIONS

MIN (2)

TYP (3)

MAX (2)

UNIT

IS

Supply current

VCM = 0.3 V

TA = 25°C

580

750

nA

Temperature

extremes

1050

VCM = 1.5 V

TA = 25°C

790

980

Temperature

extremes

1300

VOS

Input offset voltage

VCM = 0 V

TA = 25°C

±0.3

±6

mV

Temperature

extremes

±8

VCM = 1.8 V

TA = 25°C

±0.4

±5

Temperature

extremes

±7

TCVOS

Input offset average drift

See (4)

±1

µV/C

IB

Input bias current (5)

VCM = 1.6 V

−40

fA

IOS

Input offset current

10

fA