LM75B, LM75C

SNIS153D – JULY 2009 – REVISED OCTOBER 2015

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6.2 ESD Ratings

VALUE

UNIT

LM75B

Human-body model (HBM)

±2500

V(ESD)

Electrostatic discharge(1)

V

Machine model

±250

LM75C

Human-body model (HBM)

±1500

V(ESD)

Electrostatic discharge(1)

V

Machine Model

±100

(1)

Human body model, 100 pF discharged through a 1.5 k

Ω resistor. Machine model, 200 pF discharged directly into each pin. The

Charged Device Model (CDM) is a specified circuit characterizing an ESD event that occurs when a device acquires charge through

some triboelectric (frictional) or electrostatic induction processes and then abruptly touches a grounded object or surface.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

TMIN

TMAX

Specified Temperature Range

–55

125

°C

Supply Voltage Range (+VS) LM75B, LM75C

3

5.5

V

(1)

Soldering process must comply with Texas Instruments Incorporated Reflow Temperature Profile specifications. Refer to

(2)

Reflow temperature profiles are different for lead-free and non-lead-free packages.

6.4 Thermal Information

LM75B

THERMAL METRIC(1)

D (SOIC)

DGK (VSSOP)

UNIT

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

115.2

158.7

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

62.2

52.3

°C/W

RθJB

Junction-to-board thermal resistance

56.4

78.8

°C/W

ψJT

Junction-to-top characterization parameter

10.2

5.3

°C/W

ψJB

Junction-to-board characterization parameter

55.8

77.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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