0.0

20.0

40.0

60.0

80.0

100.0

120.0

−50

−25

0

25

50

75

100

125

150

175

TC - Case Temperature - ºC

G001

0.1

1

10

100

1000

5000

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

10us

100us

1ms

10ms

DC

Single Pulse

Max RthetaJC = 1.0ºC/W

G001

10

100

200

0.01

0.1

1

2

TAV - Time in Avalanche - mS

TC = 25ºC

TC = 125ºC

G001

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

−75

−25

25

75

125

175

TC - Case Temperature - ºC

VGS = 4.5V

VGS = 10V

ID =25A

G001

0.0001

0.001

0.01

0.1

1

10

100

0

0.2

0.4

0.6

0.8

1

VSD − Source-to-Drain Voltage - V

TC = 25°C

TC = 125°C

G001

CSD18501Q5A

SLPS319C – JUNE 2012 – REVISED JANUARY 2015

www.ti.com

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

Figure 12. Maximum Drain Current vs Temperature

6

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