4.3 Typical MOSFET Characteristics (continued)

TA = 25°C (unless otherwise stated)

Qg - Gate Charge (nC)

0

20

40

60

80

100

120

0

1

2

3

4

5

6

7

8

9

10

D004

VDS = 20V

ID = 100A

Figure 4-4. Gate Charge

VDS - Drain-to-Source Voltage (V)

0

4

8

12

16

20

24

28

32

36

40

100

1000

10000

100000

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

Figure 4-5. Capacitance

TC - Case Temperature (°C)

-75

-50

-25

0

25

50

75

100 125 150 175 200

0.3

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

D012

D006

ID = 250µA

Figure 4-6. Threshold Voltage vs Temperature

VGS - Gate-to-Source Voltage (V)

0

2

4

6

8

10

12

14

16

18

20

0

1

2

3

4

5

6

7

8

D007

TC = 25°C, ID = 100 A

TC = 125°C, ID = 100 A

Figure 4-7. On-State Resistance vs Gate-to-Source Voltage

TC - Case Temperature (°C)

-75

-50

-25

0

25

50

75

100 125 150 175 200

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

D008

VGS = 4.5 V

VGS = 10 V

ID = 100A

Figure 4-8. Normalized On-State Resistance vs Temperature

VSD - Source-to-Drain Voltage (V)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

0.0001

0.001

0.01

0.1

1

10

100

D009

TC = 25°C

TC = 125°C

Figure 4-9. Typical Diode Forward Voltage

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CSD18510KCS

SLPS663C – MARCH 2017 – REVISED MARCH 2024

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