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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD18510KCS датащи(PDF) 3 Page - Texas Instruments |
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CSD18510KCS датащи(HTML) 3 Page - Texas Instruments |
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3 / 13 page  4 Specifications 4.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0V, ID = 250μA 40 V IDSS Drain-to-source leakage current VGS = 0V, VDS = 32V 1 μA IGSS Gate-to-source leakage current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250μA 1.4 1.7 2.3 V RDS(on) Drain-to-source on-resistance VGS = 4.5V, ID = 100A 2.0 2.6 mΩ VGS = 10V, ID = 100A 1.4 1.7 gfs Transconductance VDS = 4V, ID = 100A 330 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0V, VDS = 20V, ƒ = 1MHz 8770 11400 pF Coss Output capacitance 832 1080 pF Crss Reverse transfer capacitance 424 551 pF RG Series gate resistance 0.9 1.8 Ω Qg Gate charge total (4.5 V) VDS = 20V, ID = 100A 58 75 nC Qg Gate charge total (10 V) 118 153 nC Qgd Gate charge gate-to-drain 21 nC Qgs Gate charge gate-to-source 28 nC Qg(th) Gate charge at Vth 15 nC Qoss Output charge VDS = 20V, VGS = 0V 35 nC td(on) Turnon delay time VDS = 20V, VGS = 10V, IDS = 100A, RG = 0Ω 10 ns tr Rise time 8 ns td(off) Turnoff delay time 29 ns tf Fall time 8 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 100A, VGS = 0V 0.85 1.0 V Qrr Reverse recovery charge VDS= 20V, IF = 100A, di/dt = 300A/μs 70 nC trr Reverse recovery time 41 ns 4.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance 0.6 °C/W RθJA Junction-to-ambient thermal resistance 62 °C/W www.ti.com CSD18510KCS SLPS663C – MARCH 2017 – REVISED MARCH 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: CSD18510KCS |
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