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CSD13383F4 датащи(PDF) 1 Page - Texas Instruments

номер детали CSD13383F4
подробное описание детали  CSD13383F4 12 V N-Channel FemtoFET™ MOSFET
PDF  13 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
Logo TI2 - Texas Instruments

CSD13383F4 датащи(HTML) 1 Page - Texas Instruments

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CSD13383F4 12 V N-Channel FemtoFET™ MOSFET
1 Features
• Low on-resistance
• Ultra low Qg and Qgd
• Ultra-small footprint (0402 case size)
– 1.0 mm × 0.6 mm
• Low profile
– 0.36 mm height
• Integrated ESD protection diode
– Rated >2 kV HBM
– Rated >2 kV CDM
• Lead and halogen free
• RoHS compliant
2 Applications
• Optimized for load switch applications
• Optimized for general purpose Switching
Applications
• Single-cell battery applications
• Handheld and mobile applications
3 Description
This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET
technology is designed and optimized to minimize the
footprint in many handheld and mobile applications.
This technology is capable of replacing standard
small signal MOSFETs while providing at least a 60%
reduction in footprint size.
.
.
1.00 mm
0.36 mm
0.60 mm
Figure 3-1. Typical Part Dimensions
.
.
Product Summary
TA = 25°C
TYPICAL VALUE
UNIT
VDS
Drain-to-Source Voltage
12
V
Qg
Gate Charge Total (4.5 V)
2.0
nC
Qgd
Gate Charge Gate-to-Drain
0.6
nC
RDS(on)
Drain-to-Source On-Resistance
VGS = 2.5 V
53
mΩ
VGS = 4.5 V
37
VGS(th)
Threshold Voltage
1.0
V
.
Ordering Information
DEVICE(1)
QTY
MEDIA
PACKAGE
SHIP
CSD13383F4
3000
7-Inch
Reel
Femto (0402) 1.0 mm ×
0.6 mm SMD Lead Less
Tape and
Reel
CSD13383F4T
250
(1)
For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
12
V
VGS
Gate-to-Source Voltage
±10
V
ID
Continuous Drain Current(1)
2.9
A
IDM
Pulsed Drain Current(1) (2)
18.5
A
IG
Continuous Gate Clamp Current
25
mA
Pulsed Gate Clamp Current(1) (2)
250
PD
Power Dissipation
500
mW
ESD
Rating
Human Body Model (HBM)
2
kV
Charged Device Model (CDM)
2
kV
TJ,
Tstg
Operating Junction Temperature
Storage Temperature
–55 to 150
°C
EAS
Avalanche Energy, single pulse ID = 6.7,
L = 0.1 mH, RG = 25 Ω
2.2
mJ
(1)
Typical RθJA = 250°C/W.
(2)
Pulse duration ≤100 μs, duty cycle ≤1%.
D
G
S
Figure 3-2. Top View
CSD13383F4
SLPS517C – DECEMBER 2014 – REVISED FEBRUARY 2022
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.


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