5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-source voltage

VGS = 0 V, IDS = 250 μA

12

V

IDSS

Drain-to-source leakage current

VGS = 0 V, VDS = 9.6 V

1

µA

IGSS

Gate-to-source leakage current

VDS = 0 V, VGS = 10 V

10

µA

VGS(th)

Gate-to-source threshold voltage

VDS = VGS, IDS = 250 μA

0.70

1.00

1.25

V

RDS(on)

Drain-to-source on-resistance

VGS = 2.5 V, IDS = 0.5 A

53

65

mΩ

VGS = 4.5 V, IDS = 0.5 A

37

44

mΩ

gfs

Transconductance

VDS = 6 V, IDS = 0.5 A

5.4

S

DYNAMIC CHARACTERISTICS

Ciss

Input capacitance

VGS = 0 V, VDS = 6 V,

ƒ = 1 MHz

224

291

pF

Coss

Output capacitance

68

88

pF

Crss

Reverse transfer capacitance

47

61

pF

RG

Series gate resistance

240

Ω

Qg

Gate charge total (4.5 V)

VDS = 6 V, IDS = 0.5 A

2.0

2.6

nC

Qgd

Gate charge gate-to-drain

0.6

nC

Qgs

Gate charge gate-to-source

0.4

nC

Qg(th)

Gate charge at Vth

0.1

nC

Qoss

Output charge

VDS = 6 V, VGS = 0 V

0.9

nC

td(on)

Turn on delay time

VDS = 6 V, VGS = 4.5 V,

IDS = 0.5 A, RG = 2 Ω

46

ns

tr

Rise time

122

ns

td(off)

Turn off delay time

250

ns

tf

Fall time

290

ns

DIODE CHARACTERISTICS

VSD

Diode forward voltage

ISD = 0.5 A, VGS = 0 V

0.7

1.0

V

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJA

Junction-to-ambient thermal resistance(1)

90

°C/W

Junction-to-ambient thermal resistance(2)

250

(1)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

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CSD13383F4

SLPS517C – DECEMBER 2014 – REVISED FEBRUARY 2022

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