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ISO124 датащи(PDF) 10 Page - Texas Instruments |
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ISO124 датащи(HTML) 10 Page - Texas Instruments |
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10 / 29 page ![]() 10 ISO124 SBOS074E – SEPTEMBER 1997 – REVISED JUNE 2018 www.ti.com Product Folder Links: ISO124 Submit Documentation Feedback Copyright © 1997–2018, Texas Instruments Incorporated 8 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information 8.1.1 Carrier Frequency Considerations The ISO124 amplifier transmits the signal across the isolation barrier by a 500-kHz duty-cycle modulation technique. For input signals having frequencies below 250 kHz, this system works like any linear amplifier. But for frequencies above 250 kHz, the behavior is similar to that of a sampling amplifier. Figure 9 shows this behavior graphically; at input frequencies above 250 kHz, the device generates an output signal component of reduced magnitude at a frequency below 250 kHz. This is the aliasing effect of sampling at frequencies less than two times the signal frequency (the Nyquist frequency). At the carrier frequency and its harmonics, both the frequency and amplitude of the aliasing go to zero. 8.1.2 Isolation Mode Voltage Induced Errors IMV can induce errors at the output as indicated by the plots of IMV vs Frequency. It should be noted that if the IMV frequency exceeds 250 kHz, the output also will display spurious outputs (aliasing) in a manner similar to that for VIN > 250 kHz and the amplifier response will be identical to that shown in Figure 9.This occurs because IMV-induced errors behave like input-referred error signals. To predict the total error, divide the isolation voltage by the IMR shown in Figure 11 and compute the amplifier response to this input-referred error signal from the data shown in Figure 9. For example, if a 800-kHz 1000-Vrms IMR is present, then a total of [(–60 dB) + (–30 dB)] x (1000 V) = 32-mV error signal at 200 kHz plus a 1-V, 800-kHz error signal will be present at the output. 8.1.3 High IMV dV/dt Errors As the IMV frequency increases and the dV/dt exceeds 1000 Vµs, the sense amp may start to false trigger, and the output will display spurious errors. The common-mode current being sent across the barrier by the high slew rate is the cause of the false triggering of the sense amplifier. Lowering the power-supply voltages below ±15 V may decrease the dV/dt to 500 V/M s for typical performance. 8.1.4 High Voltage Testing TI has adopted a partial discharge test criterion that conforms to the German VDE0884 Optocoupler Standards. This method requires the measurement of minute current pulses (< 5 pC) while applying 2400-Vrms, 60-Hz high- voltage stress across every ISO124 isolation barrier. No partial discharge may be initiated to pass this test. This criterion confirms transient overvoltage (1.6 × 1500 Vrms) protection without damage to the ISO124. Lifetest results verify the absence of failure under continuous rated voltage and maximum temperature. This new test method represents the “state-of-the art” for nondestructive high-voltage reliability testing. It is based on the effects of nonuniform fields that exist in heterogeneous dielectric material during barrier degradation. In the case of void nonuniformities, electric field stress begins to ionize the void region before bridging the entire high-voltage barrier. The transient conduction of charge during and after the ionization can be detected externally as a burst of 0.01–0.1-µs current pulses that repeat on each ac voltage cycle. The minimum ac barrier voltage that initiates partial discharge is defined as the “inception voltage.” Decreasing the barrier voltage to a lower level is required before partial discharge ceases and is defined as the “extinction voltage.” The package insulation processes have been characterized and developed to yield an inception voltage in excess of 2400 Vrms so that transient overvoltages below this level will not damage the ISO124. The extinction voltage is above 1500 Vrms so that even overvoltage induced partial discharge will cease once the barrier voltage is reduced to the 1500-Vrms (rated) level. Older high-voltage test methods relied on applying a large enough overvoltage (above rating) to break down marginal parts, but not so high as to damage good ones. Our new partial discharge testing gives us more confidence in barrier reliability than breakdown/no breakdown criteria. |
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