4

ISO124

SBOS074E – SEPTEMBER 1997 – REVISED JUNE 2018

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Copyright © 1997–2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Supply voltage

±18

V

Analog input voltage, VIN

100

V

Continuous isolation voltage

1500

Vrms

Junction temperature

125

°C

Output short to common

Continuous

Storage temperature, Tstg

–40

125

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±1000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±500

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VS1

High-side analog supply voltage (±VS1 to GND1)

±4.5

±15

±18

V

VS2

Low-side analog supply voltage (±VS2 to GND2)

±4.5

±15

±18

V

VIN

Analog input voltage

±10

V

TA

Operating temperature

–25

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

ISO124

UNIT

DVA (SOIC)

NVF (PDIP)

28 PINS

16 PINS

RθJA

Junction-to-ambient thermal resistance

79.8

51.0

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

32.9

32.4

°C/W

RθJB

Junction-to-board thermal resistance

42.2

29.5

°C/W

ψJT

Junction-to-top characterization parameter

6.6

10.4

°C/W

ψJB

Junction-to-board characterization parameter

40.9

29.0

°C/W