August 2002

MTP3055E

N-CHANNEL 60V - 0.1

Ω -12A TO-220

STripFET™ POWER MOSFET

s

TYPICAL RDS(on) = 0.1Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

175°C OPERATING TEMPERATURE

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

REGULATORS

s

DC-DC & DC-AC CONVERTERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

(q) Pulse width limited by safe operating area

First digit of the datecode being Z or K identifies silicon

characterized in this datasheet

TYPE

VDSS

RDS(on)

ID

MTP3055E

60 V

< 0.15

Ω

12 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS =0)

60

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

60

V

VGS

Gate- source Voltage

±20

V

ID

Drain Current (continuous) at TC = 25°C

12

A

IDm

Drain Current (pulsed) at TC = 100°C

9A

IDM ( )

Drain Current (pulsed)

48

A

PTOT

Total Dissipation at TC = 25°C

40

W

Tstg

Storage Temperature

–65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

TO-220

1

2

3

INTERNAL SCHEMATIC DIAGRAM