MTP3055E

THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-case

Thermal Resistance Junction-case Max

3.75

°C/W

Rthj-amb

Rthc-s

Tl

Thermal Resistance Junction-ambient Max

Thermal Resistance Case-sink Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

°C/W

°C/W

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tjmax)

12

A

EAS

Single pulse Avalanche Energy

(starting Tj = 25°C, ID =IAR,VDD =25V

50

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

60

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

1µA

VDS = Max Rating x 0.8, TC=125 °C

10

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ±20V

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250 µA

2

2.9

4

V

RDS(on)

Static Drain-source On

Resistance

VGS =10 V,ID =7 A

0.1

0.15

Ω

ID(on)

On State Drain Current

VDS> ID(on) X RDS(on)max VGS = 10V

12

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS=ID(on) X RDS(on)max , ID =6A

4

6S

Ciss

Input Capacitance

VDS =25V,f= 1MHz,VGS =0

760

pF

Coss

Output Capacitance

100

pF

Crss

Reverse Transfer

Capacitance

30

pF