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DS91M047TMA/NOPB датащи(PDF) 4 Page - Texas Instruments |
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DS91M047TMA/NOPB датащи(HTML) 4 Page - Texas Instruments |
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4 / 18 page ![]() DS91M047 SNLS145E – JUNE 2008 – REVISED APRIL 2013 www.ti.com DC ELECTRICAL CHARACTERISTICS (1) (2) (3) (4) Over supply voltage and operating temperature ranges, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Units LVCMOS DC Specifications VIH High-Level Input Voltage 2.0 VDD V VIL Low-Level Input Voltage GND 0.8 V IIH High-Level Input Current VIH = 3.6V -15 ±1 15 μA IIL Low-Level Input Current VIL = 0V -15 ±1 15 μA VCL Input Clamp Voltage IIN = -18 mA -1.5 V M-LVDS DC Specifications |VAB| Differential Output Voltage Magnitude 480 650 mV RL = 50Ω, CL = 5 pF ΔVAB Change in Differential Output Voltage Magnitude See Figure 1 and Figure 3 −50 50 mV Between Logic States VOS(SS) Steady-State Common-Mode Output Voltage 0.30 1.6 2.10 V RL = 50Ω | ΔVOS(SS)| Change in Steady-State Common-Mode Output Voltage See Figure 1 and Figure 2 0 50 mV Between Logic States VA(OC) Maximum Steady-State Open-Circuit Output Voltage 0 2.4 V See Figure 4 VB(OC) Maximum Steady-State Open-Circuit Output Voltage 0 2.4 V VP(H) Voltage Overshoot, Low-to-High Level Output(5) RL = 50Ω, CL = 5 pF 1.2VSS V CD = 0.5 pF, see Figure 6 VP(L) Voltage Overshoot, High-to-Low Level Output(5) −0.2VSS V and Figure 7 IOS Output Short-Circuit Current(6) See Figure 5 -43 43 mA VA = 3.8V, VB = 1.2V 0 32 μA IA Driver High-Impedance Output Current VA = 0V or 2.4V, VB = 1.2V −20 20 μA VA = −1.4V, VB = 1.2V −32 0 μA VA = 3.8V, VB = 1.2V 0 32 μA IB Driver High-Impedance Output Current VA = 0V or 2.4V, VB = 1.2V −20 20 μA VA = −1.4V, VB = 1.2V −32 0 μA IAB Driver High-Impedance Output Differential Curent VA = VB, −1.4V ≤ V ≤ 3.8V −4 4 μA (IA − IB) IA(OFF) Driver High-Impedance Output Power-Off Current VA = 3.8V, VB = 1.2V DE = 0V 0 32 μA 0V ≤ VDD ≤ 1.5V VA = 0V or 2.4V, VB = 1.2V DE = 0V −20 20 μA 0V ≤ VDD ≤ 1.5V VA = −1.4V, VB = 1.2V DE = 0V −32 0 μA 0V ≤ VDD ≤ 1.5V IB(OFF) Driver High-Impedance Output Power-Off Current VA = 3.8V, VB = 1.2V DE = 0V 0 32 μA 0V ≤ VDD ≤ 1.5V VA = 0V or 2.4V, VB = 1.2V DE = 0V −20 20 μA 0V ≤ VDD ≤ 1.5V VA = −1.4V, VB = 1.2V DE = 0V −32 0 μA 0V ≤ VDD ≤ 1.5V (1) The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured. (2) Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD and ΔVOD. (3) Typical values represent most likely parametric norms for VDD = +3.3V and TA = +25°C, and at the Recommended Operating Conditions at the time of product characterization and are not ensured. (4) CL includes fixture capacitance and CD includes probe capacitance. (5) Specification is specified by characterization and is not tested in production. (6) Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. 4 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: DS91M047 |
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