DS91M047

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SNLS145E – JUNE 2008 – REVISED APRIL 2013

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1) (2)

Power Supply Voltage

−0.3V to +4V

LVCMOS Input Voltage

−0.3V to (VDD + 0.3V)

M-LVDS Output Voltage

−1.9V to +5.5V

M-LVDS Output Short Circuit Current Duration

Continuous

Junction Temperature

+140°C

Storage Temperature Range

−65°C to +150°C

Lead Temperature Range

Soldering (4 sec.)

+260°C

Maximum Package Power Dissipation @ +25°C

D Package

2.21W

Derate D Package

19.2 mW/°C above +25°C

Package Thermal Resistance (4-Layer, 2 oz. Cu,

θJA

+52°C/W

JEDEC)

θJC

+19°C/W

ESD Susceptibility

HBM

≥8 kV

MM

≥250V

CDM

≥1250V

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including inoperability and degradation of

device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or

other conditions beyond those indicated in the is not implied. The Recommended Operating Conditions indicate conditions at which the

device is functional and the device should not be operated beyond such conditions.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

RECOMMENDED OPERATING CONDITIONS

Min

Typ

Max

Units

Supply Voltage (VDD)

+3.0

+3.3

+3.6

V

Voltage at Any Bus Terminal (Separate or Common-Mode)

−1.4

+3.8

V

High Level Input Voltage (VIH)

2.0

VDD

V

Low Level Input Voltage (VIL)

0

0.8

V

Operating Free Air Temperature (TA)

−40

+25

+85

°C

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