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F6921 датащи(PDF) 5 Page - Renesas Technology Corp |
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F6921 датащи(HTML) 5 Page - Renesas Technology Corp |
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5 / 17 page ![]() F6921 Datasheet R35DS0092EU0102 Rev.1.02 Nov 14, 2024 Page 5 2. Specifications Caution: Exposure of the device to parameter values outside of the range listed below may reduce the operating lifetime and adversely and permanently alter the device characteristics. Furthermore, functional operation at or near absolute maximum ratings is not implied. 2.1 Absolute Maximum Ratings Parameter Symbol Conditions Minimum Maximum Unit Supply Voltage VDD - -0.3 1.2 V Reference Current IREF - 0 250 μA Input RF Pin DC Voltage VDC_RFI - -0.3 1.0 V Output RF Pin DC Voltage VDC_RFO - -0.3 1.2 V RF Input Power PIN VDD = 1.0V, VSWR<2:1 - 0 dBm Junction Temperature TJ - - 125 °C ESD – Human Body Model VHBM JS-001-2012 - 750 V ESD – Charged Device Model VCDM JESD22-C101 - 250 V 2.2 Thermal Information Parameter Symbol Value Unit Theta JB. Junction to board. θJB 14 °C/W Theta JC. Junction to case. (case top) θJC 108 °C/W Theta JA. Junction to ambient. θJA 47 °C/W Storage Temperature TSTOR -40 to +150 ° C Lead Temperature (soldering, 30s) TLEAD 260 ° C |
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