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CD74HC08-Q1

SCLS512B – JULY 2003 – REVISED APRIL 2020

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(1)

AEC Q100-002 indicate that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per AEC Q100-002(1)

HBM ESD Classification Level 2

±2000

V

Charged device model (CDM), per AEC Q100-

011 CDM ESD Classification Level C6

±1000

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Supply voltage

2

5

6

V

VIH

High-level input voltage

VCC = 2 V

1.5

V

VCC = 4.5 V

3.15

VCC = 6 V

4.2

VIL

Low-level input voltage

VCC = 2 V

0.5

V

VCC = 4.5 V

1.35

VCC = 6 V

1.8

VI

Input voltage

0

VCC

V

VO

Output voltage

0

VCC

V

Δt/Δv

Input transition rise and fall rate

VCC = 2 V

1000

ns

VCC = 4.5 V

500

VCC = 6 V

400

TA

Operating free-air temperature

CD74HC08-Q1

–40

125

°C

6.4 Thermal Information

THERMAL METRIC

CD74HC08-Q1

UNIT

D (SOIC)

14 PINS

RθJA

Junction-to-ambient thermal resistance

133.6

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

89.0

°C/W

RθJB

Junction-to-board thermal resistance

89.5

°C/W

ΨJT

Junction-to-top characterization parameter

45.5

°C/W

ΨJB

Junction-to-board characterization parameter

89.1

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W