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TC9WMB1AFK датащи(PDF) 13 Page - Toshiba Semiconductor

номер детали TC9WMB1AFK
подробное описание детали  CMOS Digital Integrated Circuits Silicon Monolithic
PDF  18 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC9WMB1AFK датащи(HTML) 13 Page - Toshiba Semiconductor

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TC9WMB1AFK/FU,TC9WMB2AFK/FU
2007-10-19
13
EEPROM Characteristics (GND = 0 V, 2.3 V ≤ VCC ≤ 2.7 V, Topr = −40 to 85°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Write time
tWR
⎯
⎯
⎯
12
ms
Rewrite endurance
NEW
⎯
1
× 105
⎯
⎯
Times
Data retention time
tRET
⎯
10
⎯
⎯
Years
EEPROM Characteristics (GND = 0 V, 2.7 V < VCC ≤ 3.6 V, Topr = −40 to 85°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Write time
tWR
⎯
⎯
⎯
10
ms
Rewrite endurance
NEW
⎯
1
× 105
⎯
⎯
Times
Data retention time
tRET
⎯
10
⎯
⎯
Years
Capacitance Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
VCC (V)
Typ.
Unit
Input capacitance
CIN
⎯
3.3
4
pF
Output capacitance
CO
⎯
3.3
3
pF



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