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2SC6033 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали 2SC6033
подробное описание детали  Silicon NPN Epitaxial Type
PDF  5 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC6033 датащи(HTML) 2 Page - Toshiba Semiconductor

  2SC6033 Datasheet HTML 1Page - Toshiba Semiconductor 2SC6033 Datasheet HTML 2Page - Toshiba Semiconductor 2SC6033 Datasheet HTML 3Page - Toshiba Semiconductor 2SC6033 Datasheet HTML 4Page - Toshiba Semiconductor 2SC6033 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC6033
2006-11-13
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 100 V, IE = 0
⎯
⎯
0.1
μ
A
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
⎯
⎯
0.1
μ
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
⎯
⎯
V
hFE (1)
VCE = 2 V, IC = 0.3 A
250
⎯
400
DC current gain
hFE (2)
VCE = 2 V, IC = 1.0 A
120
⎯
⎯
Collector-emitter saturation voltage
VCE (sat)
IC = 1.0 A, IB = 33 mA
⎯
⎯
0.18
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.0 A, IB = 33 mA
⎯
⎯
1.10
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1MHz
⎯
18
⎯
pF
Rise time
tr
⎯
25
⎯
Storage time
tstg
⎯
470
⎯
Switching time
Fall time
tf
See Figure 1.
VCC ∼− 20 V, RL = 20 Ω
IB1 = −IB2 = 33 mA
⎯
38
⎯
ns
Figure 1 Switching Time Test Circuit & Timing Chart
Marking
W
X
Part No. (or abbreviation code)
Lot code (month)
Lot code (year)
Dot: even year
No dot: odd year
IB2
IB1
20
μs
Output
Input
IB2
IB1
VCC
Duty cycle
< 1%



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