2SC6033

2006-11-13

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC6033

High-Speed Swtching Applications

DC-DC Converter Applications

Storobe Flash Applications

Characteristics

Symbol

Rating

Unit

Collector-base voltage

100

V

80

V

Collector-emitter voltage

50

V

Emitter-base voltage

6

V

DC

2.5

Collector current

Pulse

5

A

Base current

0.3

A

t = 10s

1.00

Collector power

dissipation

DC

0.625

W

Junction temperature

150

°C

Storage temperature range

−55 to 150

°C

Note 1: Mounted on an FR4 board (glass epoxy, 1.6mm thick, Cu area: 64.5 mm

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

－

－

－

ＴＳＭ

1.6-0.1

2.8-0.3

3

2

1

+0.2

+0.2

1. Base

2. Emitter

3. Collector

Unit : mm

Weight: 0.01g (Typ.)

2-3S1A

JEDEC

JEITA

TOSHIBA