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TMPR4951B датащи(PDF) 29 Page - Toshiba Semiconductor

номер детали TMPR4951B
подробное описание детали  64-Bit TX System RISC TX49 Family
PDF  256 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
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TMPR4951B датащи(HTML) 29 Page - Toshiba Semiconductor

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Handling Precautions
17
3.3.3
Derating
The term “derating” refers to ensuring greater device reliability by setting operating ranges reduced from rated
values and taking into consideration factors such as current surges and noise.
While derating generally applies to electrical stresses such as voltage, current and power, and environmental
stresses such as ambient temperature and humidity, it differs from application to application. Refer to the
individual technical datasheets available for each product. Power devices in particular require heat sink
consideration as well since the level of derating greatly affects reliability.
For your reference, details are provided in the appendix. Be sure to read the appendix carefully.
3.3.4
Unused Pins
If unused pins are left open, some devices exhibit input instability, resulting in faulty operation such as a sudden
increase in current consumption. In addition, if unused output pins on a device are connected to the power
supply, GND or other output pin, the IC may malfunction or break down.
Since the treatment of unused input and output pins differs for each product and pin, please follow the directions
in the individual technical datasheets and databooks.
CMOS logic IC inputs, for example, have extremely high impedance. If an input pin is left open, it can readily
pick up noise and become unstable. In this case, if the input reaches an intermediate level, both the P-channel
and N-channel transistors will become conductive, allowing unnecessary power supply current to flow. It is
therefore necessary to ensure that the unused input gates of a device are connected to the power supply pin or
ground (GND) pin of the same device. For treatment of heat sink pins, refer to the individual technical
datasheets and databooks.
3.3.5
Latch-up
Semiconductor devices sometimes transition to an inherent condition referred to as “latch-up.” This condition
mainly occurs in CMOS devices. This happens when a parasitic PN-PN junction (thyristor structure) built in the
device itself is turned on, causing a large current to flow between the power supply voltage and GND,
eventually causing the device to break down.
Latch-up occurs when the voltage impressed on an input or output pin exceeds the rated value, causing a large
current to flow in the internal element, or when the voltage impressed on the power supply voltage pin exceeds
its rated value, forcing the internal element to breakdown. Once the element falls into the latch-up state, even
though the excess voltage may have been applied only for an instant, the large current continues to flow between
the power supply voltage and GND, potentially causing device explosion or combustion. To avoid this problem,
observe the following:
(1) Do not allow the voltage levels on the input and output pins to rise above the power supply voltage or
decrease below GND. Consider the timing during power supply activation as well.
(2) Do not allow any abnormal noises to be applied to the device.
(3) Set the electrical potential of unused input pins to the power supply voltage or GND.
(4) Do not create an output short.



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