GD820HTX75P6HB datasheet(4/11 Pages) STARPOWER

4 / 11 page

GD820HTX75P6HB

IGBT Module

3/31/2022

4/11

B07

Tj=25

oC,VCC=400V,

VCEM≤750V

tP≤3μs,VGE=15V,

Tj=175

oC,VCC=400V,

VCEM≤750V

3800

Diode Characteristics T

F=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Diode Forward

Voltage

IF=450A,VGE=0V,Tj=25

1.40

1.65

IF=450A,VGE=0V,Tj=150

1.35

IF=450A,VGE=0V,Tj=175

1.30

IF=820A,VGE=0V,Tj=25

1.70

IF=820A,VGE=0V,Tj=175

1.65

Recovered Charge

VR=400V,IF=450A,

-di/dt=7070A/μs,VGE=-8V,

LS=24nH,Tj=25

16.0

μC

IRM

Peak Reverse

Recovery Current

254

Erec

Reverse Recovery

Energy

5.03

Recovered Charge

VR=400V,IF=450A,

-di/dt=6150A/μs,VGE=-8V,

LS=24nH,Tj=150

36.0

μC

IRM

Peak Reverse

Recovery Current

320

Erec

Reverse Recovery

Energy

9.49

Recovered Charge

VR=400V,IF=450A,

-di/dt=6010A/μs,VGE=-8V,

LS=24nH,Tj=175

40.5

μC

IRM

Peak Reverse

Recovery Current

338

Erec

Reverse Recovery

Energy

10.5

NTC Characteristics T

F=25

oC unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

R25

Rated Resistance

5.0

kΩ

∆R/R

Deviation of R100

TC=100

oC,R100=493.3Ω

-5

P25

Power

Dissipation

20.0

B25/50

B-value

R2=R25exp[B25/50(1/T2-

1/(298.15K))]

3375

B25/80

B-value

R2=R25exp[B25/80(1/T2-

1/(298.15K))]

3411

B25/100

B-value

R2=R25exp[B25/100(1/T2-

1/(298.15K))]

3433

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