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GD820HTX75P6HB датащи(PDF) 3 Page - StarPower Europe AG

номер детали GD820HTX75P6HB
подробное описание детали  750V/820A 6 in one-package
PDF  11 Pages
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производитель  STARPOWER [StarPower Europe AG]
домашняя страница  www.starpowereurope.com
Logo STARPOWER - StarPower Europe AG

GD820HTX75P6HB датащи(HTML) 3 Page - StarPower Europe AG

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GD820HTX75P6HB
IGBT Module
©2022 STARPOWER Semiconductor Ltd.
3/31/2022
3/11
B07
IGBT Characteristics T
F=25
oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VCE(sat)
Collector to Emitter
Saturation Voltage
IC=450A,VGE=15V,
Tj=25
oC
1.25
1.50
V
IC=450A,VGE=15V,
Tj=150
oC
1.35
IC=450A,VGE=15V,
Tj=175
oC
1.40
IC=820A,VGE=15V,
Tj=25
oC
1.55
IC=820A,VGE=15V,
Tj=175
oC
1.90
VGE(th)
Gate-Emitter Threshold
Voltage
IC=9.60mA,VCE=VGE,
Tj=25
oC
5.0
5.7
7.0
V
IC=9.60mA,VCE=VGE,
Tj=175
oC
3.5
ICES
Collector Cut-Off
Current
VCE=VCES,VGE=0V,
Tj=25
oC
1.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25
oC
400
nA
RGint
Internal Gate Resistance
0.7
Ω
Cies
Input Capacitance
VCE=50V,f=100kHz,
VGE=0V
42.1
nF
Coes
Output Capacitance
1.80
nF
Cres
Reverse Transfer
Capacitance
1.18
nF
QG
Gate Charge
VCE =400V,IC =450A,
VGE=-8…+15V
3.01
μC
td(on)
Turn-On Delay Time
VCC=400V,IC=450A,
RG=2.4Ω, LS=24nH,
VGE=-8V/+15V,
Tj=25
oC
126
ns
tr
Rise Time
62
ns
td(off)
Turn-Off Delay Time
639
ns
tf
Fall Time
149
ns
Eon
Turn-On Switching
Loss
17.3
mJ
Eoff
Turn-Off Switching
Loss
25.4
mJ
td(on)
Turn-On Delay Time
VCC=400V,IC=450A,
RG=2.4Ω, LS=24nH,
VGE=-8V/+15V,
Tj=150
oC
136
ns
tr
Rise Time
68
ns
td(off)
Turn-Off Delay Time
715
ns
tf
Fall Time
221
ns
Eon
Turn-On Switching
Loss
22.5
mJ
Eoff
Turn-Off Switching
Loss
31.0
mJ
td(on)
Turn-On Delay Time
VCC=400V,IC=450A,
RG=2.4Ω, LS=24nH,
VGE=-8V/+15V,
Tj=175
oC
138
ns
tr
Rise Time
68
ns
td(off)
Turn-Off Delay Time
739
ns
tf
Fall Time
227
ns
Eon
Turn-On Switching
Loss
24.8
mJ
Eoff
Turn-Off Switching
Loss
32.6
mJ
ISC
SC Data
tP≤6μs,VGE=15V,
5100
A



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