TPCP8201 datasheet(3/7 Pages) TOSHIBA

номер детали	TPCP8201

подробное описание детали	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

PDF	7 Pages

Scroll/Zoom	100%

производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCP8201

2007-01-16

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

⎯

±10

μA

Drain cut-off current

IDSS

VDS = 30 V, VGS = 0 V

⎯

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

⎯

Drain-source breakdown

voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

⎯

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.3

⎯

2.5

VGS = 4.5 V, ID = 2.1 A

⎯

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 2.1 A

⎯

mΩ

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.1 A

3.5

7.0

⎯

Input capacitance

Ciss

⎯

470

⎯

Reverse transfer capacitance

Crss

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

Rise time

⎯

5.2

⎯

Turn-on time

ton

⎯

8.3

⎯

Fall time

⎯

4.0

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 μs

⎯

Total gate charge

(gate-source plus gate-drain)

⎯

Gate-source charge 1

Qgs1

⎯

1.7

⎯

Gate-drain (“miller”) charge

Qgd

VDD ≈ 24 V, VGS = 10 V, ID = 4.2 A

⎯

2.4

⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

16.8

Forward voltage (diode)

VDSF

IDR = 4.2 A, VGS = 0 V

⎯

−1.2

VDD ∼− 15 V

0 V

VGS

10 V

ID = 2.1 A

VOUT

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