TPCP8201

2007-01-16

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPCP8201

Portable Equipment Applications

Motor Drive Applications

DC-DC Converter Applications

• Lead(Pb)-Free

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

DC

(Note 1)

4.2

Drain current

Pulse

(Note 1)

16.8

A

Single-device operation

(Note 3a)

1.48

Drain power

dissipation

(t

= 5 s)

(Note 2a)

Single-device value at

dual operation

(Note 3b)

1.23

Single-device operation

(Note 3a)

0.58

Drain power

dissipation

(t

= 5 s)

(Note 2b)

Single-device value at

dual operation

(Note 3b)

0.36

W

Single pulse avalanche energy

(Note 4)

2.86

mJ

Avalanche current

2.1

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

0.12

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: For Notes 1 to 6, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3V1G

Weight: 0.017 g (typ.)

Circuit Configuration

8201

1

2

3

4

8

7

6

5

＊

Lot No.

1

2

3

4

8

7

6

5

0.33±0.05

-0.11

-0.12

0.475

0.65

A

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

B

A

S

0.025

S

-0.12

-0.11

1．Source1

2．Gate1

3．Source2

4．Gate2

5．Drain2

6．Drain2

7．Drain1

8．Drain1