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GD35PIY120C5SN датащи(PDF) 5 Page - StarPower Europe AG |
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GD35PIY120C5SN датащи(HTML) 5 Page - StarPower Europe AG |
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5 / 13 page ![]() GD35PIY120C5SN IGBT Module ©2016 STARPOWER Semiconductor Ltd. 7/27/2016 5/13 SX0A IGBT-brake Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation Voltage IC=25A,VGE=15V, Tj=25 oC 1.70 2.15 V IC=25A,VGE=15V, Tj=125 oC 1.95 IC=25A,VGE=15V, Tj=150 oC 2.00 VGE(th) Gate-Emitter Threshold Voltage IC=0.63mA,VCE=VGE, Tj=25 oC 5.2 6.0 6.8 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25 oC 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25 oC 400 nA RGint Internal Gate Resistance 0 Ω QG Gate Charge VGE=-15…+15V 0.24 μC Cies Input Capacitance VCE=30V,f=1MHz, VGE=0V 2.40 nF Cres Reverse Transfer Capacitance 0.08 nF QG Gate Charge VGE=-15…+15V 0.24 μC td(on) Turn-On Delay Time VCC=600V,IC=25A, RG=18 Ω,V GE=±15V, Tj=25 oC 148 ns tr Rise Time 27 ns td(off) Turn-Off Delay Time 200 ns tf Fall Time 338 ns Eon Turn-On Switching Loss 1.66 mJ Eoff Turn-Off Switching Loss 1.64 mJ td(on) Turn-On Delay Time VCC=600V,IC=25A, RG=18 Ω,V GE=±15V, Tj=125 oC 144 ns tr Rise Time 27 ns td(off) Turn-Off Delay Time 217 ns tf Fall Time 401 ns Eon Turn-On Switching Loss 1.92 mJ Eoff Turn-Off Switching Loss 2.36 mJ td(on) Turn-On Delay Time VCC=600V,IC=25A, RG=18 Ω,V GE=±15V, Tj=150 oC 142 ns tr Rise Time 29 ns td(off) Turn-Off Delay Time 219 ns tf Fall Time 523 ns Eon Turn-On Switching Loss 2.23 mJ Eoff Turn-Off Switching Loss 2.69 mJ ISC SC Data tP ≤10μs,V GE=15V, Tj=150 oC,V CC=900V, VCEM ≤1200V 100 A |
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