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GD35PIY120C5SN датащи(PDF) 3 Page - StarPower Europe AG |
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GD35PIY120C5SN датащи(HTML) 3 Page - StarPower Europe AG |
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3 / 13 page ![]() GD35PIY120C5SN IGBT Module ©2016 STARPOWER Semiconductor Ltd. 7/27/2016 3/13 SX0A IGBT-inverter Characteristics T C=25 oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation Voltage IC=35A,VGE=15V, Tj=25 oC 1.70 2.15 V IC=35A,VGE=15V, Tj=125 oC 1.95 IC=35A,VGE=15V, Tj=150 oC 2.00 VGE(th) Gate-Emitter Threshold Voltage IC=0.88mA,VCE=VGE, Tj=25 oC 5.2 6.0 6.8 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25 oC 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25 oC 100 nA RGint Internal Gate Resistance 0 Ω QG Gate Charge VGE=-15…+15V 0.33 μC Cies Input Capacitance VCE=30V,f=1MHz, VGE=0V 3.20 nF Cres Reverse Transfer Capacitance 0.10 nF QG Gate Charge VGE=-15…+15V 0.33 μC td(on) Turn-On Delay Time VCC=600V,IC=35A, RG=13 Ω,V GE=±15V, Tj=25 oC 157 ns tr Rise Time 30 ns td(off) Turn-Off Delay Time 210 ns tf Fall Time 320 ns Eon Turn-On Switching Loss 2.05 mJ Eoff Turn-Off Switching Loss 2.50 mJ td(on) Turn-On Delay Time VCC=600V,IC=35A, RG=13 Ω,V GE=±15V, Tj=125 oC 158 ns tr Rise Time 33 ns td(off) Turn-Off Delay Time 225 ns tf Fall Time 505 ns Eon Turn-On Switching Loss 2.50 mJ Eoff Turn-Off Switching Loss 3.80 mJ td(on) Turn-On Delay Time VCC=600V,IC=35A, RG=13 Ω,V GE=±15V, Tj=150 oC 160 ns tr Rise Time 35 ns td(off) Turn-Off Delay Time 230 ns tf Fall Time 520 ns Eon Turn-On Switching Loss 2.65 mJ Eoff Turn-Off Switching Loss 4.00 mJ ISC SC Data tP ≤10μs,V GE=15V, Tj=150 oC,V CC=900V, VCEM ≤1200V 140 A |
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