BAS29 datasheet(1/2 Pages) TEL

номер детали	BAS29

подробное описание детали	SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE

PDF	2 Pages

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производитель	TEL [TRANSYS Electronics Limited]

домашняя страница	http://www.transyselectronics.com

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SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE

BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes.

ABSOLUTE MAXIMUM RATINGS (per diode)

Continuous reverse voltage

VR

max.

90 V

Repetitive peak forward current

IFRM

max.

600 mA

Forward current

IF

max.

250 mA

Junction temperature

Tj

max.

150 °C

Forward voltage at IF = 50 mA

VF

<

0.84 V

Reverse recovery time when switched from

IF = 30 mA to IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA

trr

<

75 ns

RATINGS (per diode) (at TA = 25°C unless otherwise specified)

Limiting values

Continuous reverse voltage

VR

max.

90 V

Repetitive peak forward current

IFRM

max.

600 mA

Repetitive peak reverse current

IRRM

max.

600 mA

BAS29, BAS31, BAS35

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Marking

BAS29– L20

BAS31 – L21

BAS35 – L22

1

2

3

1

2

3

1

2

3

BAS29

BAS31

BAS35

SOT-23

Transys

Electronics

LI M ITE D

Аналогичный номер детали - BAS29

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BAS29	90Kb / 12P	General purpose controlled avalanche double diodes 1999 May 21
Jinan Gude Electronic D...	BAS29	96Kb / 1P	SURFACE MOUNT SWITCHING DIODES
Fairchild Semiconductor	BAS29	58Kb / 2P	Small Signal Diode
Guangdong Kexin Industr...	BAS29	79Kb / 4P	General Purpose Controlled Avalanche Diodes
NXP Semiconductors	BAS29	138Kb / 9P	General purpose controlled avalanche (double) diodes 2003 Mar 20

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Аналогичное описание - BAS29

производитель	номер детали	датащи	подробное описание детали
Hitachi Semiconductor	1SS118	17Kb / 5P	Silicon Epitaxial Planar Diode for High Speed Switching
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Renesas Technology Corp	HSM2836C	148Kb / 5P	Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Technology Corp	HSB123	85Kb / 5P	Silicon Epitaxial Planar Diode for High Speed Switching
TRANSYS Electronics Lim...	1N4151	151Kb / 2P	SILICON PLANAR EPITAXIAL HIGH SPEED DIODE
Renesas Technology Corp	HSB2836	85Kb / 5P	Silicon Epitaxial Planar Diode for High Speed Switching
Renesas Technology Corp	HSD119	56Kb / 5P	Silicon Epitaxial Planar Diode for High Speed Switching
Hitachi Semiconductor	1SS84	21Kb / 3P	Silicon Epitaxial Planar Diode for High Speed Switching
Continental Device Indi...	1N4151	227Kb / 3P	SILICON PLANAR EPITAXIAL HIGH SPEED DIODE
Continental Device Indi...	BAV23S	140Kb / 4P	SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE

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Аналогичный номер детали - BAS29

Аналогичное описание - BAS29

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