BAS29 datasheet(2/2 Pages) TEL

номер детали	BAS29

подробное описание детали	SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE

PDF	2 Pages

Scroll/Zoom	100%

производитель	TEL [TRANSYS Electronics Limited]

домашняя страница	http://www.transyselectronics.com

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Average rectified forward current

(averaged over any 20 ms period)

IF(AV)

max.

250 mA

Non-repetitive peak forward current

t = 1 µs; Tj = 25 °C prior to surge; per crystal

IFSM

max.

3 A

t = 1 s; Tj = 25 °C prior to surge; per crystal

max.

0.75 A

Forward current (D)

max.

250 mA

Repetitive peak reverse energy

tp ≥ 50 µs; f ≤ 20 Hz; Tj = 25 °C

ERRM

max.

5.0 mJ

Storage temperature

Tstg

–55 to +150 °C

Junction temperature

max.

150 °C

THERMAL RESISTANCE

From junction to ambient*

Rth j–a

430 K/W

CHARACTERISTICS (per diode)

Tamb = 25 °C unless otherwise specified

Forward voltage

IF = 10 mA

0.75 V

IF = 50 mA

0.84 V

IF = 100 mA

0.90 V

IF = 200 mA

1.00 V

IF = 400 mA

1.25 V

Reverse currents

VR = 90 V

100 nA

VR = 90 V; Tamb = 150 °C

100 µA

Reverse avalanche breakdown voltage

IR = 1 mA

V(BR)R

120 to 175 V

Diode capacitance

VR = 0; f = 1 MHz

35 pF

Reverse recovery time when switched from

IF = 30 mA to IR = 30 mA; RL = 100 Ω;

measured at IR = 3 mA

trr

<75 ns

* When mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.

BAS29, BAS31, BAS35

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