RT9232BGS datasheet(6/14 Pages) RICHTEK

6 / 14 page

RT9232B

DS9232B-03

March 2007

www.richtek.com

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Reference

Error Amplifier Reference Voltage

VREF

0.792

0.8

0.808

Error Amplifier

DC gain

Gain-Bandwidth product

GBW

MHz

Slew Rate

COMP=10pF

μs

Soft Start

External SS Source Current

ISS

μA

PWM Controller Gate Driver

Upper Drive Source

RUG_SC

VBOOT − PHASE = 12V

VBOOT − UGATE = 1V

5.2

Upper Drive Sink

RUG_SK

VBOOT − PHASE = 1V

2.7

Lower Drive Source

RLG_SC

VPVCC − LGATE = 1V

3.5

Lower Drive Sink

RLG_SK

VLGATE = 1V

1.7

Driving Capability

Upper Drive Source

IUG_SC

VBOOT − UGATE = 12V

1.0

Upper Drive Sink

IUG_SK

VUGATE − PHASE = 12V

2.0

Lower Drive Source

ILG_SC

VPVCC − LGATE = 12V

1.6

Lower Drive Sink

ILG_SK

VLGATE − GND = 12V

3.2

Protection

OCSET Current Source

IOCSET

VOCSET = 11.5V

170

200

230

μA

Under-Voltage Protection

FB Falling

0.5

0.6

0.7

Under-Voltage Protection Delay

μs

Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for

stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the

operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended

periods may remain possibility to affect device reliability.

Note 2. Devices are ESD sensitive. Handling precaution recommended.

Note 3. The device is not guaranteed to function outside its operating conditions.

Note 4.

θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of

JEDEC 51-3 thermal measurement standard.

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