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RT9232GS датащи(PDF) 11 Page - Richtek Technology Corporation |
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RT9232GS датащи(HTML) 11 Page - Richtek Technology Corporation |
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11 / 14 page ![]() RT9232 11 DS9232-06 March 2007 www.richtek.com D) (1 C x L x f V x 8 1 ESR x ΔI ΔV OUT 2 OSC OUT L OUT − + = (6) L x f x V V x ) V (V ΔI OSC IN OUT OUT IN L − = (5) D) (1 x D x I I OUT IN(RMS) − = (7) Generally, an inductor that limits the ripple current between 20% and 50% of output current is appropriate. Make sure that the output inductor could handle the maximum output current and would not saturate over the operation temperature range. Output Capacitor Selection The output capacitors determine the output ripple voltage ( ΔVOUT) and the initial voltage drop after a high slew-rate load transient. The selection of output capacitor depends on the output ripple requirement. The output ripple voltage is described as Equation (6). For electrolytic capacitor application, typically 90~95% of the output voltage ripple is contributed by the ESR of output capacitors. Paralleling lower ESR ceramic capacitor with the bulk capacitors could dramatically reduce the equivalent ESR and consequently the ripple voltage. Input Capacitor Selection Use mixed types of input bypass capacitors to control the input voltage ripple and switching voltage spike across the MOSFETs. The buck converter draws pulsewise current from the input capacitor during the on time of upper MOSFET. The RMS value of ripple current flowing through the input capacitor is described as: The input bulk capacitor must be cable of handling this ripple current. Sometime, for higher efficiency the low ESR capacitor is necessarily. Appropriate high frequency ceramic capacitors physically near the MOSFETs effectively reduce the switching voltage spikes. MOSFET Selection The selection of MOSFETs is based upon the considerations of RDS(ON), gate driving requirements, and thermal management requirements. The power loss of upper MOSFET consists of conduction loss and switching loss and is expressed as: OSC FALL RISE IN OUT DS(ON) OUT SW_UPPER _UPPER COND UPPER f x ) T (T x x V I 2 1 D x R x I P P P + + = + = (8) OSC DIODE F OUT OSC IN RR DS(ON) OUT DIODE RR _LOWER COND LOWER f x T x x V I x 2 1 f x x V Q D) (1 x R x I P P P P + + − = + + = (9) where TRISE and TFALL are rising and falling time of VDS of upper MOSFET respectively. RDS(ON) and QG should be simultaneously considered to minimize power loss of upper MOSFET. The power loss of lower MOSFET consists of conduction loss, reverse recovery loss of body diode, and conduction loss of body diode and is express as: where TDIODE is the conducting time of lower body diode. Special control scheme is adopted to minimize body diode conducting time. As a result, the RDS(ON) loss dominates the power loss of lower MOSFET. Use MOSFET with adequate RDS(ON) to minimize power loss and satisfy thermal requirements. Feedback Compensation Figure 4 highlights the voltage-mode control loop for a synchronous buck converter. Figure 5 shows the corresponding Bode plot. The output voltage (VOUT) is regulated to the reference voltage. The error amplifier EA output (COMP) is compared with the oscillator (OSC) sawtooth wave to provide a pulse-width modulated (PWM) wave with an amplitude of VIN at the PHASE node. The PWM wave is smoothed by the output filter (L and COUT). The modulator transfer function is the small-signal transfer function of VOUT/COMP. This function is dominated by a DC gain and the output filter (L and COUT), with a double pole break frequency at FP_LC and a zero at FZ_ESR. The DC gain of the modulator is simply the input voltage (VIN) divided by the peak-to-peak oscillator voltage ΔVOSC. The break frequency FLC and FESR are expressed as Equation (10) and (11) respectively. OUT P_LC LC 2 1 F π = (10) OUT Z_ESR C x ESR x 2 1 F π = (11) |
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