| поискавой системы для электроныых деталей |
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2SA2121 датащи(PDF) 3 Page - Toshiba Semiconductor |
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2SA2121 датащи(HTML) 3 Page - Toshiba Semiconductor |
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3 / 4 page ![]() 2SA2121 2006-11-16 3 −12 0 −8 −12 −16 −20 −4 −6 −8 −10 0 −2 −4 −0.1 5 10 1000 −0.03 −30 −10 −10 1 10 −1 −0.1 −0.01 100 IC – VCE IC– VBE hFE – IC VCE (sat) – IC fT– IC Common emitter Tc = 25°C VCE = −5 V Tc = 100°C 25 −25 Common emitter VCE = −5 V IB = −20 mA Common emitter Tc = 25°C −500 −400 −200 −300 −100 −50 −0.5 0 −8 −12 −16 0 −1.0 −2.5 100 −1000 −0.1 −1 −10 −10 −100 −0.1 −1 Safe Operating Area −100 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) Collector current IC (A) Collector current IC (A) Collector current IC (A) Collector-emitter voltage VCE (V) Tc = 100°C 25 −25 Common emitter VCE = −5 V −4 −1.5 −2.0 300 500 30 50 −1 −3 −0.3 −0.1 −0.03 −30 −10 −1 −3 −0.3 Tc = 100°C 25 −25 Common emitter IC / IB = 10 V −0.03 −0.05 −5 −0.5 −1 −3 −0.1 −0.3 VCEO max *:Single non-repetitive pulse Tc = 25°C Curves must be de-rated linearly with increase in temperature. 1 ms * IC max (pulsed) * 10 ms * IC max (continuous) DC operation Tc = 25°C 100 ms * |
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