2SA2121 datasheet(2/4 Pages) TOSHIBA

номер детали	2SA2121

подробное описание детали	Power Amplifier Applications

PDF	4 Pages

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2 / 4 page

2SA2121

2006-11-16

Electrical Characteristics (Tc = 25°C)

Characteristic

Symbol

Test Conditions

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = −200 V, IE = 0

―

−5.0

μA

Emitter cut-off current

IEBO

VEB = −5 V, IC = 0

―

−5.0

μA

Collector-emitter breakdown voltage

V (BR) CEO

IC = −50 mA, IB = 0

−200

―

hFE (1)

(Note 1)

VCE = −5 V, IC = −1 A

―

160

DC current gain

hFE (2)

VCE = −5 V, IC = −8 A

―

Collector-emitter saturation voltage

VCE (sat)

IC = −10 A, IB = −1 A

―

−1.5

−3.0

Base-emitter voltage

VBE

VCE = −5 V, IC = −8 A

―

−1.0

−1.5

Transition frequency

VCE = −5 V, IC = −1 A

―

MHz

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

―

470

―

Note 1: hFE(1) classification R: 55 to 110, O: 80 to 160

Marking

2SA2121

TOSHIBA

JAPAN

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Part No. (or abbreviation code)

Characteristics

indicator

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