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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ST10F272 датащи(PDF) 136 Page - STMicroelectronics |
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ST10F272 датащи(HTML) 136 Page - STMicroelectronics |
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136 / 179 page  Electrical characteristics ST10F272 136/179 24.7 A/D converter characteristics VDD = 5V ± 10%, VSS = 0V, TA = –40 to +125°C, 4.5V ≤ VAREF ≤ VDD, VSS ≤ VAGND ≤ VSS + 0.2V Table 65. Flash data retention characteristics Number of program / erase cycles (-40°C ≤ T A ≤ 125°C) Data retention time (average ambient temperature 60°C) 256Kbyte (code store) 64Kbyte (EEPROM emulation) (1) 0 - 100 > 20 years > 20 years 1,000 - > 20 years 10,000 - 10 years 100,000 - 1 year 1. Two 64Kbyte Flash Sectors may be typically used to emulate up to 4, 8 or 16Kbyte of EEPROM. Therefore, in case of an emulation of a 16Kbyte EEPROM, 100,000 Flash Program / Erase cycles are equivalent to 800,000 EEPROM Program/Erase cycles. For an efficient use of the EEPROM Emulation please refer to dedicated Application Note document (AN2061 - “EEPROM Emulation with ST10F2xx”). Contact your local field service, local sales person or STMicroelectronics representative to get copy of such a guideline document. Table 66. A/D converter characteristics Parameter Symbol Limit Values Unit Test Condition min. max. Analog Reference voltage 1) V AREF SR 4.5 VDD V Analog Ground voltage V AGND SR VSS VSS + 0.2 V Analog Input voltage 2) V AIN SR VAGND VAREF V Reference supply current I AREF CC – – 5 1 mA µA Running mode 3) Power Down mode Sample time t S CC 1– µs 4) Conversion time t C CC 3– µs 5) Differential Non Linearity 6) DNL CC –1 +1 LSB No overload Integral Non Linearity 6) INL CC –1.5 +1.5 LSB No overload Offset Error 6) OFS CC –1.5 +1.5 LSB No overload Total unadjusted error 6) TUE CC –2.0 –5.0 –7.0 +2.0 +5.0 +7.0 LSB Port5 Port1 - No overload 3) Port1 - Overload 3) Coupling Factor between inputs 3) 7) K CC –10–6 – On both Port5 and Port1 Input Pin Capacitance 3) 8) CP1 CC –3pF CP2 CC – 4 6 pF Port5 Port1 Sampling Capacitance 3) 8) CS CC –3.5 pF |
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