M58PR512J datasheet(1/114 Pages) STMICROELECTRONICS

номер детали	M58PR512J

подробное описание детали	256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories

PDF	114 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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1 / 114 page

December 2006

Rev 3

1/114

1

M58PR256J

M58PR512J

256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst)

1.8 V supply Flash memories

Features

■

Supply voltage

–VDD = 1.7 V to 2.0 V for program, erase and

read

–VDDQ = 1.7 V to 2.0 V for I/O buffers

–VPP = 9 V for fast program

■

Synchronous / Asynchronous Read

– Synchronous Burst Read mode:

108 MHz, 66 MHz

– Asynchronous Page Read mode

– Random access: 96 ns

■

Programming time

– 4.2 µs typical Word program time using

Buffer Enhanced Factory Program

command

■

Memory organization

– Multiple Bank Memory Array: 32 Mbit

Banks (256 Mbit devices); 64 Mbit Banks

(512 Mbit devices)

– Four Extended Flash Array (EFA) Blocks of

64 Kbits

■

Dual operations

– program/erase in one Bank while read in

others

– No delay between read and write

operations

■

Block locking

– All Blocks locked at power-up

– Any combination of Blocks can be locked

with zero latency

–WP for Block Lock-Down

– Absolute Write Protection with VPP = VSS

■

Security

– 64 bit unique device number

– 2112 bit user programmable OTP Cells

■

Common Flash Interface (CFI)

■

100,000 program/erase cycles per block

■

Electronic signature

– Manufacturer Code: 20h

– 256 Mbit Device: 8818

– 512 Mbit Device: 8819

The M58PRxxxJ memories are only available as part of a multi-chip package device.

Not packaged separately

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Аналогичный номер детали - M58PR512J

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	M58PR512LE	939Kb / 119P	256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories 06-Sep-2007
Numonyx B.V	M58PR512LE	2Mb / 123P	512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
	M58PR512LE96ZAC5	2Mb / 123P	512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
	M58PR512LE96ZAD5	2Mb / 123P	512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
STMicroelectronics	M58PR512LE96ZB5	939Kb / 119P	256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories 06-Sep-2007

More results

Аналогичное описание - M58PR512J

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	M58LR128HT	844Kb / 112P	128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories 26-Feb-2007
	M58LT256JST	836Kb / 106P	256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories 27-Jun-2007
	M58PR256LE	939Kb / 119P	256-Mbit, 512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories 06-Sep-2007
Numonyx B.V	M36P0R8070E0	638Kb / 22P	256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
	M39P0R9080E4	466Kb / 23P	512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
	M58LR128KC	1Mb / 108P	128 or 256 Mbit (x16, mux I/O, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
	M58LR128KT	1Mb / 110P	128 or 256 Mbit (횞16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
	M58LT256JST	1Mb / 108P	256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
	M58PR512LE	2Mb / 123P	512-Mbit or 1-Gbit (횞 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
	M58WR016QT	1Mb / 110P	16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories

More results

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