TQL850CSV33

Taiwan Semiconductor

2

Version: B2207

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise specified) (Note 1)

PARAMETER

SYMBOL

LIMIT

UNIT

Power Supply Pin

VIN

55

V

EN Voltage to GND

VEN

-0.3 to 55

V

OUT/RO/WDO Voltage to GND

VOUT/VRO/WDO

-0.3 to 7

V

WDI/RTH Voltage to GND

VWDI/VRTH

-0.3 to 7

V

Junction Temperature Range

TJ

-40 to +150

°C

Storage Temperature Range

TSTG

-55 to +150

°C

ESD Rating (Human Body Model) (Note 2)

HBM

±2

kV

ESD Rating (Charged Device Model)

CDM

±1

kV

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction to Case Thermal Resistance

RӨJC

12

°C/W

Junction to Ambient Thermal Resistance

RӨJA

50

°C/W

Notes: The thermal data is based on the PCB JESD 51-

3 at natural convection on 1s0p board with 1 copper layer (1 x 70μm Cu)

and with 300mm2 heatsink area on PCB

RECOMMENDED OPERATING CONDITIONS (Note 3)

PARAMETER

SYMBOL

CONDITIONS

UNIT

Power Supply Pin

VIN

VOUT+Vdr to 50

V

Extended Power Supply Pin

VIN,ext

3 to 50

V

EN Voltage to GND

VEN

0 to 50

V

Output Stable Capacitor

COUT

≧1

μF

ESR of Output Capacitor

ESR

≦100

Ω

Operating Junction Temperature Range

TJ

-40 to +150

°C

Operating Ambient Temperature Range

TOPA

-40 to +125

°C

ELECTRICAL SPECIFICATIONS (V

IN

= 13.5V, TJ = -40 to 150°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Supply Voltage

Output Voltage

0.05mA < IOUT < 500mA

4.23V < VIN < 28V

VOUT

3.23

3.3

3.37

V

Output Voltage

0.05mA < IOUT < 200mA

3.72V < VIN < 40V

VOUT

3.23

3.3

3.37

V

Start-up Slew-rate

VIN > 18V/ms

COUT = 1

μF

0.33V < VOUT < 2.97V

dVOUT/dt

--

35

--

V/ms

Current Limit

0V < VOUT < 3.1V

Ilim

--

650

--

mA

Load Regulation

IOUT = 0.05 to 500mA

VIN = 6V

ΔVOUT,lo

-20

-1.5

+15

mV