ADN2004AS datasheet(1/6 Pages) ADV

номер детали	ADN2004AS

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

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производитель	ADV [Advanced (Shenzhen) Electronics Co.,Ltd]

домашняя страница	http://www.advsemi.com/en/

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ADN2004AS

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Ver.0.11

ADV

N-Channel Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY

Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )

Symbol

Parameter

Ratings

Unit

Common Ratings

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±

12

TJ

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to150

°C

IS

Diode Continuous Forward Current

TC =25°C

28

A

Mounted on Large Heat Sink

IDM

300μs Pulse Drain Current Tested

（

2）

TC=25°C

112

A

ID

Continuous Drain Current

（

1）

TC=25°C

28

A

TC=100°C

22.5

A

PD

Maximum Power Dissipation

TC=25°C

3.1

W

Thermal Characteristics

Symbol

Parameter

Ratings

Unit

RthJC

Thermal resistance junction-case max

（

1）

6.9

°C/W

RthJA

Thermal resistance junction-ambient max

（

1）

50

°C/W

VDSS

ID

RDS(ON) (mΩ)

20V

28A

4.0mΩ

SOP-8

S

G

D

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Advanced (Shenzhen) Ele...	ADN2005AS	1Mb / 6P	N-Channel Enhancement Mode Field Effect Transistor Ver.0.11

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