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ADN2004AS датащи(PDF) 2 Page - Advanced (Shenzhen) Electronics Co.,Ltd

номер детали ADN2004AS
подробное описание детали  N-Channel Enhancement Mode Field Effect Transistor
PDF  6 Pages
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производитель  ADV [Advanced (Shenzhen) Electronics Co.,Ltd]
домашняя страница  http://www.advsemi.com/en/
Logo ADV - Advanced (Shenzhen) Electronics Co.,Ltd

ADN2004AS датащи(HTML) 2 Page - Advanced (Shenzhen) Electronics Co.,Ltd

  ADN2004AS Datasheet HTML 1Page - Advanced (Shenzhen) Electronics Co.,Ltd ADN2004AS Datasheet HTML 2Page - Advanced (Shenzhen) Electronics Co.,Ltd ADN2004AS Datasheet HTML 3Page - Advanced (Shenzhen) Electronics Co.,Ltd ADN2004AS Datasheet HTML 4Page - Advanced (Shenzhen) Electronics Co.,Ltd ADN2004AS Datasheet HTML 5Page - Advanced (Shenzhen) Electronics Co.,Ltd ADN2004AS Datasheet HTML 6Page - Advanced (Shenzhen) Electronics Co.,Ltd  
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Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
On/off
Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=250uA
20
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 20V, VGS=0V
--
--
1
uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, IDS=250uA
0.45
0.68
1.0
V
IGSS
Gate Leakage Current
VGS=±12V, VDS=0V
--
--
±
100
nA
RDS(ON)
Drain-SourceOn-stateResistance⑵
VGS= 2.5V, IDS=15A
--
3.5
4.5
m
VGS= 4.5V, IDS=20A
--
3.1
4
Dynamic Characteristics
Ciss
Input Capacitance
VGS=0V,
VDS= 10V,
Frequency=1.0MHz
--
2500
--
pF
Coss
Output Capacitance
--
580
--
Crss
Reverse Transfer Capacitance
--
315
--
Switching Characteristics
td(ON)
Turn-on Delay Time⑴
VDD=10V,
ID= 20A, VGS= 4.5V,
RGEN=3Ω
--
11
--
ns
tr
Turn-on Rise Time⑴
--
32
--
td(OFF)
Turn-off Delay Time⑴
--
32
--
tf
Turn-off Fall Time⑴
--
25
--
Qg
Total Gate Charge⑴
VDS=10V, VGS= 4.5V,
IDS=20A
--
24
--
nC
Qgs
Gate-Source Charge⑴
--
8.2
--
Qgd
Gate-Drain Charge⑴
--
15.6
--
Diode Characteristics
VSD
Diode Forward Voltage⑵
ISD = 10A, VGS = 0
--
--
1.2
V
NOTES:
1.
Independent of operating temperature.
2.
Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%



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