TIG030TS

No. A0637-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Gate-to-Emitter Threshold Voltage

VGE(off)

VCE=10V, IC=1mA

0.5

1.2

V

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=150A, VGE=4V

3.7

5.4

V

Input Capacitance

Cies

VCE=10V, f=1MHz

2610

pF

Output Capacitance

Coes

VCE=10V, f=1MHz

59

pF

Reverse Transfer Capacitance

Cres

VCE=10V, f=1MHz

36

pF

Package Dimensions

Electrical Connection

unit : mm (typ)

7006A-007

Large Current R Load Screening Circuit

1 : Collector

2 : Collector

3 : Collector

4 : Collector

5 : Emitter

6 : Emitter

7 : Emitter

8 : Gate

SANYO : TSSOP8

3.0

0.65

0.125

85

14

0.25

12

3

4

87

6

5

1 : Collector

2 : Collector

3 : Collector

4 : Collector

5 : Emitter

6 : Emitter

7 : Emitter

8 : Gate

Top view

100kΩ

CM=400µF

RL=2.0Ω

RG≥50Ω

VCC=320V

+

TIG030TS

4V

0V

Note1. Gate Series Resistance RG≥50Ω is recommended for prolection purpose at the time of turn OFF. However,

if dv/dt

≤400V/µs is satisfied at customer’s actual set evaluation, RG<50Ω can also be used.

Note2. The collector voltage gradient dv / dt must be smaller than 400V /

µs to protect the device when it is turned off.