TIG030TS

No. A0637-1/4

Features

•

Low-saturation voltage.

•

4V drive.

•

Enhansment type.

•

Built-in gate-to-emitter protection diode.

•

•

dv / dt guarantee.*

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Emitter Voltage

VCES

400

V

Gate-to-Emitter Voltage (DC)

VGES

±6V

Gate-to-Emitter Voltage (Pulse)

VGES

PW≤1ms

±8V

Collector Current (Pulse)

ICP

PW≤500µs, duty cycle≤0.5%, CM=400µF

150

A

Maximum Collector-to-Emitter dv / dt

dVCE / dt

VCE≤320V, starting Tch=25°C

400

V / µs

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--40 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=2mA, VGE=0V

400

V

Collector-to-Emitter Cutoff Current

ICES

VCE=320V, VGE=0V

10

µA

Gate-to-Emitter Leakage Current

IGES

VGE=±6V, VCE=0V

±10

µA

Marking : G030

Continued on next page.

* : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/µs.

Ordering number : ENA0637A

53007 TI IM / 11007PJ TI IM TC-00000459

SANYO Semiconductors

DATA SHEET

TIG030TS

N-Channel IGBT

Light-Controlling Flash Applications

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the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

's products or

equipment.

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