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5STP17F2201 датащи(PDF) 3 Page - ABB |
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5STP17F2201 датащи(HTML) 3 Page - ABB |
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3 / 6 page ![]() 5STP 17F2201 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1063-01 March 05 page 3 of 6 Triggering Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Peak forward gate voltage VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Mean forward gate power PG(AV) 3 W Characteristic values Parameter Symbol Conditions min typ max Unit Gate-trigger voltage VGT Tvj = -40 °C Tvj = 25 °C Tvj = 125 °C 0.25 4 3 2 V Gate-trigger current IGT Tvj = -40 °C Tvj = 25 °C Tvj = 125 °C 10 500 250 150 mA Thermal Maximum rated values 1) Parameter Symbol Conditions min typ max Unit Operating junction temperature range Tvj -40 125 °C Storage temperature range Tstg -40 125 °C Characteristic values Parameter Symbol Conditions min typ max Unit Thermal resistance junction to case Rth(j-c) Double-side cooled Fm = 20...24 kN 16 K/kW Rth(j-c)A Anode-side cooled Fm = 20...24 kN 25 K/kW Rth(j-c)C Cathode-side cooled Fm = 20...24 kN 45 K/kW Thermal resistance case to heatsink Rth(c-h) Double-side cooled Fm = 20...24 kN 4 K/kW Rth(c-h) Single-side cooled Fm = 20...24 kN 8 K/kW Analytical function for transient thermal impedance: ) e - (1 R = (t) Z n 1 i t/ - i th c) - th(j ∑ = i τ i 1 2 3 4 Rth i(K/kW) 5.500 7.240 2.000 1.340 τ i(s) 0.4653 0.1533 0.0375 0.0034 Fig. 1 Transient thermal impedance junction-to case. |
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