5STP17F2201 datasheet(2/6 Pages) ABB

2 / 6 page

5STP 17F2201

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA1063-01 March 05

page 2 of 6

On-state

Maximum rated values

Parameter

Symbol Conditions

min

typ

max

Unit

Average on-state current

IT(AV)M

Half sine wave, Tc = 70°C

1702

RMS on-state current

IT(RMS)

2674

Peak non-repetitive surge

current

ITSM

25.5×10

Limiting load integral

tp = 10 ms, Tvj = 125 °C,

VD = VR = 0 V

3.25×10

Peak non-repetitive surge

current

ITSM

27.2×10

Limiting load integral

tp = 8.3 ms, Tvj = 125 °C,

VD = VR = 0 V

3.07×10

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

On-state voltage

IT = 2000 A, Tvj = 125 °C

1.43

Threshold voltage

V(T0)

0.992

Slope resistance

IT = 2100 A - 6400 A, Tvj= 125 °C

0.206

Ω

Holding current

Tvj = 25 °C

170

Tvj = 125 °C

Latching current

Tvj = 25 °C

450

Tvj = 125 °C

350

Switching

Maximum rated values

Parameter

Symbol Conditions

min

typ

max

Unit

Critical rate of rise of on-

state current

di/dtcrit

Cont.

f = 50 Hz

200

A/µs

Critical rate of rise of on-

state current

di/dtcrit

Tvj = 125 °C,

IT = IT(AV),

≤ 1470 V,

IFG = 2 A, tr = 0.3 µs

Cont.

f = 1 Hz

1000

A/µs

Circuit-commutated turn-off

time

Tvj = 125°C, ITRM = 2000 A,

VR = 200 V, diT/dt = -12.5 A/µs,

≤ 0.67⋅V

DRM, dvD/dt = 50V/µs

200

µs

Characteristic values

Parameter

Symbol Conditions

min

typ

max

Unit

Recovery charge

Qrr

Tvj = 125°C, ITRM = 2000 A,

VR = 200 V,

diT/dt = -12.5 A/µs

2600

µAs

Gate turn-on delay time

tgd

VD = 0.4

⋅V

RM, IFG = 2 A,

tr = 0.3 µs, Tvj = 25 °C

µs

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