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TZA3014HT датащи(PDF) 13 Page - NXP Semiconductors

номер детали TZA3014HT
подробное описание детали  2.5 Gbits/s postamplifier with level detector
PDF  28 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TZA3014HT датащи(HTML) 13 Page - NXP Semiconductors

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2001 Jun 25
13
Philips Semiconductors
Product specification
2.5 Gbits/s postamplifier with level detector
TZA3014
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Notes
1. JEDEC standard.
2. HTQFP32 and HBCC32 packages.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+5.5
V
Vn
DC voltage
pins IN, INQ, LOSTH, LEVEL, Vref, TEST, OUTQ, OUT, GNDp,
VCCA and VCCB
−0.5
VCC + 0.5 V
pins LOS, INV and MUTE
−0.5
+7
V
In
DC current
pins IN and INQ
−20
+20
mA
pins LOSTH and LEVEL
0
14
µA
pins Vref, TEST and LOS
−1+1
mA
pins OUT and OUTQ
−30
+30
mA
pins INV and MUTE
0
20
µA
Ptot
total power dissipation
−
0.6
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
ambient temperature
−40
+85
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-s)
thermal resistance from junction to
solder point (exposed die pad)
note 1
15
K/W
Rth(j-a)
thermal resistance from junction to
ambient
1s2p multi-layer test board; notes 1
and 2
33
K/W
Rth(s-a)
thermal resistance from solder point to
ambient (exposed die pad)
1s2p multi-layer test board; notes 1
and 2
18
K/W
Rth(s-a)(req)
required thermal resistance from
solder point to ambient
LOS detector switched on
Vo = 200 mV (p-p) single-ended
130
K/W
Vo = 800 mV (p-p) single-ended
75
K/W



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