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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TSA5059TS датащи(PDF) 12 Page - NXP Semiconductors |
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TSA5059TS датащи(HTML) 12 Page - NXP Semiconductors |
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12 / 24 page  1999 Oct 05 12 Philips Semiconductors Preliminary specification 2.7 GHz I2C-bus controlled low phase noise frequency synthesizer TSA5059 CHARACTERISTICS VCC = 4.5 to 5.5 V; Tamb = −20 to +85 °C; fxtal = 4 MHz; measured according to Fig.4; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply (pin VCC) VCC supply voltage 4.5 5.0 5.5 V ICC supply current Tamb =25 °C30 37 45 mA VCC(POR) supply voltage below which POR is active Tamb =25 °C − 2.75 − V RF inputs (pins RFA and RFB) fi(RF) RF input frequency 64 − 2700 MHz Vi(RF)(rms) RF input voltage (RMS value) fi(RF) between 64 and 150 MHz; note 1 12.6 − 300 mV −25 − +2.5 dBm fi(RF) between 150 and 2200 MHz; note 1 7.1 − 300 mV −30 − +2.5 dBm fi(RF) between 2.2 and 2.7 GHz; note 1 22.4 − 300 mV −20 − +2.5 dBm Zi(RF) RF input impedance see Fig.7 −− − Ω Ci(RF) RF input capacitance see Fig.7 −− − pF MDR main divider ratio prescaler disabled 64 − 131071 prescaler enabled 128 − 262142 Crystal oscillator (pin XTAL) fxtal crystal frequency 4 − 16 MHz Z XTAL crystal oscillator negative impedance 4 MHz crystal 400 680 −Ω ZXTAL recommended crystal series resistance 4 MHz crystal −− 200 Ω PXTAL crystal drive level 4 MHz crystal; note 2 − 40 −µW fi(ext) external reference input frequency note 3 2 − 20 MHz Vi(ext)(p-p) external reference input voltage (peak-to-peak value) note 3 200 − 500 mV Phase comparator and charge pump fcomp comparison frequency −− 2 MHz Ncomp equivalent phase noise at the phase detector input fcomp = 250 kHz; C1 =C0=1; in the loop bandwidth −−157 − dBc/Hz I cp charge pump current C1 = 0; C0 = 0 100 135 170 µA C1 = 0; C0 = 1 210 280 350 µA C1 = 1; C0 = 0 450 600 750 µA C1 = 1; C0 = 1 920 1230 1540 µA Icpl charge pump leakage current −10 0 +10 nA |
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